| PART |
Description |
Maker |
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| AS4SD4M16DG-8_IT AS4SD4M16DG-8_XT AS4SD4M16DG-10_I |
4 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| AS4SD8M16 AS4SD8M16DG-75_ET AS4SD8M16DG-75_IT AS4S |
128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| HY5S5B6GLFP-SE HY5S5B6GLF-H |
256Mbit (16Mx16bit) Mobile SDR Memory
16M X 16 SYNCHRONOUS DRAM, 6.5 ns, PBGA54
|
http://
HYNIX SEMICONDUCTOR INC
|
| K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| IBM03164B9C IBM0316809C |
16Mb Synchronous DRAM(16M位同步动态RAM)
16MbMbit x 8 I/O x 2 Bank）Synchronous DRAM(16M位（1Mx 8 I/O x 2 组）同步动态RAM)
|
IBM Microeletronics
|
| MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
SMSC, Corp.
|
| IS42S16800B IS42S16800B-6T IS42S81600B-6T IS42S168 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc.
|
| KM48S8030CT-FL KM48S8030CT-GFH KM48S8030CT-GF7 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Samsung Electronic
Electronic Theatre Controls, Inc.
|
